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Updated: May 8, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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在2D hBN中使用TEM-EELS在碳化合物层下探测缺陷

Dana O Byrne1,2,3, Jim Ciston3, Frances I Allen2,3,4

  • 1Department of Chemistry, University of California, Berkeley, CA 94720, USA.

Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada
|July 19, 2024
PubMed
概括

宽束电子能量损失光谱 (EELS) 尽管表面污染,但有效地描述了二维六边形化 (hBN) 的缺陷. 该技术识别-氧结合的光谱特征,量化离子束处理后的缺陷性.

关键词:
两维材料是二维材料.鱼 鱼 鱼 鱼 鱼污染污染污染的污染是什么缺陷 缺陷 缺陷 缺陷 缺陷六角性的化.

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Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
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Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...