高性能Cu2O/Zr-Doped β-Ga2O3异质连接二极管的微结构演变和电气行为
Jiangyiming Jiang1, Simeng Wu1, Peisen Liu1
1Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education and School of Materials Science and Engineering, Shandong University, Jinan 250061, P. R. China.
ACS applied materials & interfaces
|July 20, 2024
概括
氧化兴奋剂增强了β-氧化物 (β-Ga2O3) 薄膜的低温制造. 这提高了高质量的氧化铜/β-Ga2O3异界二极管的结晶性,这对于先进的电子设备至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 设备工程 设备工程
背景情况:
- 贝塔氧化物 (β-Ga2O3) 是一种超宽带间隙半导体,对于高功率,高频率和深紫外线光电非常重要.
- 对于灵活的电子产品来说,需要低温制造β-Ga2O3膜,但通常会导致较差的晶度和缺陷,限制设备性能.
- 高质量的异质连接接口对于先进的半导体设备至关重要.
研究的目的:
- 研究 (Zr) 兴奋剂对在低温下沉积的β-Ga2O3膜的结晶性和微观结构的影响.
- 为了制造和表征铜氧化物 (Cu2O) /Zr-化β-Ga2O3异质连接二极管.
- 为了评估制造的异质连接二极管的电性能和接口质量.
主要方法:
- 制造Cu2O/Zr-doped β-Ga2O3异质连接二极管,使用磁铁子喷射,而无需故意加热基板.
- 微结构分析以评估薄膜晶度和相位纯度.
- 电气特性包括电流-电压 (J-V) 和电容-电压 (C-V) 测量.
主要成果:
- 在低基质温度下,Zr兴奋剂显著改善了β-Ga2O3膜的结晶性,从无形转变为结晶β相.
- 晶体β-Ga2O3促进了Cu2O的表轴生长,并抑制了在界面上有害的CuO二次相的形成.
- Cu2O/Zr-doped β-Ga2O3异质连接二极管表现出接近理想的电气行为,其理想系数为1.6.
结论:
- 在低沉积温度下,Zr兴奋剂是一种有效的策略,可以实现高质量的β-Ga2O3膜和异质连接接口.
- 开发的制造方法可以在低温下生产高性能β-Ga2O3基异质连接装置.
- 这种方法对灵活电子和其他先进的电子和光电子设备的应用具有前景.
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