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Updated: Jun 20, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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可转移高κ介电和二维半导体的表轴集成

Xuzhong Cong1, Xiaoyin Gao1, Haoying Sun2

  • 1Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China.

Journal of the American Chemical Society
|July 22, 2024
PubMed
概括

研究人员开发了一种新方法,用于将高介电常数 (高-κ) 材料与高级晶体管的高流动性二维半导体集成. 这种技术可以创建具有灵活电子潜力的高性能二维场效应晶体管.

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