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Updated: May 5, 2026

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM
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In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM

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垂直的InGaN发光二极管与混合分布式布拉格反射器

Guo-Yi Shiu1, Ying Ke1, Kuei-Ting Chen1

  • 1Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402202, Taiwan.

ACS omega
|July 22, 2024
PubMed
概括

这项研究介绍了一种新的垂直类型的InGaN发光二极管 (LED),用于共振腔的混合分布式布拉格反射器 (DBR). 这种设计增强了光发射特性,为先进的LED应用铺平了道路.

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Biasing of P-N Junction01:16

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The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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