一个基于IGBT模块中的热流分布的交叉点温度模型,具有层空隙
Qi Li1, Feng Zhang1, Yonghe Chen1
1Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin, 541004, China.
Heliyon
|July 23, 2024
概括
层中的空隙显著影响绝缘门双极晶体管 (IGBT) 的热可靠性. 这项研究引入了一种新模型,可以准确预测结点温度,并监测空隙引起的水平温度差异.
科学领域:
- 电气工程 电气工程
- 材料科学 材料科学 材料科学
- 半导体设备 半导体设备
背景情况:
- 在绝缘门双极晶体管 (IGBT) 中的接空隙降低了热可靠性.
- 了解空隙引起的热流干扰对于设备性能至关重要.
研究的目的:
- 调查空隙大小和分数对热流,结点温度和热阻的影响.
- 开发一个改进的交叉点温度模型,以计算空气诱导的热流分布.
主要方法:
- 建立了一个改进的结点温度模型,包括热流分布 (HD) 和空隙特征.
- 引入了水平热阻和水平热容量,以模拟空隙效应.
- 为新模型提出了一个参数提取方法.
主要成果:
- 由于空气的高热阻,空隙阻碍了热流,导致热量水平传播.
- 模块表面温度差与空隙分数增加,从9.591°C上升到109.86°C,空隙分数从0%增加到40%.
- 拟议的模型准确地估计了结点温度,并监测了水平温度差异.
结论:
- 开发的模型为IGBT连接点温度估计提供了比传统的Cauer模型更高的准确性.
- 该模型精确监测芯片层内的水平温度差异,这对于热管理至关重要.
相关概念视频
01:19Mechanism of heat transfer
1.2K
Understanding heat transfer mechanisms is essential for understanding how our bodies maintain balance in different environmental conditions. When the environment is thermoneutral, the body is in a state of balance, neither using nor releasing energy to maintain its core temperature. However, when the environment is not thermoneutral, the body employs four heat transfer mechanisms to maintain homeostasis: conduction, convection, evaporation, and radiation. These mechanisms facilitate heat...
1.2K
01:14Mechanisms of Heat Transfer I
4.2K
Just as interesting as the effects of heat transfer on a system are the methods by which the heat transfer occur. Whenever there is a temperature difference, heat transfer occurs. It may occur rapidly, such as through a cooking pan, or slowly, such as through the walls of a picnic ice box. So many processes involve heat transfer that it is hard to imagine a situation where no heat transfer occurs. Yet, every heat transfer takes place by only three methods: conduction, convection, and radiation.
4.2K
01:14Mechanisms of Heat Transfer
308
Heat transfer between the human body and its environment occurs through four main mechanisms: conduction, convection, radiation, and evaporation.
Conduction, accounting for approximately 3% of body heat loss at rest, is the process of exchanging heat between molecules of two materials in direct contact. This can result in both heat loss and gain. For instance, when the body is submerged in water, which conducts heat 20 times more effectively than air, it can either lose or gain significant...
Conduction, accounting for approximately 3% of body heat loss at rest, is the process of exchanging heat between molecules of two materials in direct contact. This can result in both heat loss and gain. For instance, when the body is submerged in water, which conducts heat 20 times more effectively than air, it can either lose or gain significant...
308
01:20Mechanisms of Heat Transfer II
3.2K
In convection, thermal energy is carried by the large-scale flow of matter. Ocean currents and large-scale atmospheric circulation, which result from the buoyancy of warm air and water, transfer hot air from the tropics toward the poles and cold air from the poles toward the tropics. The Earth’s rotation interacts with those flows, causing the observed eastward flow of air in the temperate zones. Convection dominates heat transfer by air, and the amount of available space for the airflow...
3.2K
01:21Carrier Transport
421
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
421
01:27Biasing of Metal-Semiconductor Junctions
238
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
238