相关实验视频

Updated: Jun 19, 2025

Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices

Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices

Published on: October 6, 2020

一个时间域的视角在上长轴铁电薄膜中的结构和电子响应

Christelle Kwamen¹, Matthias Rössle¹, Wolfram Leitenberger²

¹Helmholtz-Zentrum Berlin für Materialien und Energie, Wilhelm-Conrad-Röntgen Campus, BESSY II, Albert-Einstein-Str. 15, 12489 Berlin, Germany.

|July 23, 2024

概括

高频铁电测量显示,硫酸电容器中的应变歇斯底里改变了形状. 这是由于合极化,结构运动和域壁速度限制.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
固态化学固态化学

背景情况:

铁电材料表现出自发的电极化.
了解它们在电场下的动态反应对于设备应用至关重要.
与散装材料相比,Epitaxial薄膜具有独特的特性.

研究的目的:

研究在高频电气循环下铁电电容器的运行结构反应.
阐明两极化,应变和领域动态之间的关系.
为了建模铁电材料的依赖频率的行为.

主要方法:

运行时间解析的X射线衍射 (TRXRD) 被采用.
测量是在上的表轴Pb(Zr0.48Ti0.52) O3电容器上进行的.
歇斯底里循环在2-200 kHz的频率范围内进行测量.

主要成果:

在高频率下,极化歇斯底里循环会变圆.
应变歇斯底里斯从蝶形状过渡到一个平坦的子形状.
铁电应力和结构响应在应用场频率的两倍时振荡.

结论:

观察到的现象是通过两极化,应变和域壁速度之间的合来解释的.
结合振荡器系统的模型是从实验数据中得出的.
在结构反应和铁电应力之间成功建模了频率依赖的相位移.

关键词:

铁电器铁电器铁电器这是歇斯底里症.结构动力学结构动力学薄膜是一种薄膜.时间解析的X射线衍射.

更多相关视频

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition

Published on: December 21, 2015

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

相关概念视频

Fermi Level Dynamics

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...