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测量跨埋面接口的热电阻,使用频域热反射和微尺度封闭
Ronald J Warzoha1, Adam A Wilson2, Brian F Donovan3
1Department of Mechanical and Nuclear Engineering, United States Naval Academy, Annapolis, Maryland 21402, United States.
ACS applied materials & interfaces
|July 24, 2024
概括
狭窄的几何形状提高了在埋藏的二氧化 (SiO2) 接口上对热边界电阻的测量灵敏度. 这种技术可以改善电子设备内埋藏材料接口中的热性质的表征.
科学领域:
- 材料科学 材料科学 材料科学
- 热力工程是热力工程中的一个.
- 纳米技术纳米技术
背景情况:
- 精确的热边界电阻 (TBR) 描述对于电子设备的热管理至关重要.
- 埋藏的接口,例如涉及二氧化 (SiO2) 的接口,对实验性热性质测量提出了重大挑战.
- 频域热反射 (FDTR) 是测量热性能的强大技术,但其对埋藏接口的灵敏度可能是有限的.
研究的目的:
- 调查使用封闭几何学来提高使用FDTR在埋藏的SiO2接口对TBR的测量灵敏度.
- 了解辐射封闭和材料分层如何影响热散布和热透深度.
- 探索材料热电阻,封闭和测量灵敏度之间的关系.
主要方法:
- 使用频域热反射率 (FDTR) 具有有限的几何形状.
- 采用有限元法 (FEM) 进行热传播和热透深度的参数分析.
- 研究了相对于束直径的材料限制对测量灵敏度的影响.
主要成果:
- 传感器薄膜和底层的辐射封闭有效地减少了热的传播,增加了热透深度.
- 测量灵敏度不仅仅取决于多层系统中最大的热电阻.
- 增加材料的限制显著提高了对TBR的灵敏度,这些灵敏度在埋在几十微米到毫米以下的界面上显著提高.
结论:
- 狭窄的几何形状提供了一个可行的策略,以提高FDTR对埋藏接口的灵敏度.
- 这种方法使得对电子设备中以前无法访问的材料接口进行TBR的实验性表征.
- 这些发现为在先进的电子架构中改进热管理提供了途径.
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