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在宽带间隙半导体2D晶体GaN纳米板中的压电

Yong Wang¹, Shaopeng Wang^1,2, Yu Zhang³

¹The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710071, China.

|July 25, 2024

概括

这项研究详细说明了化 (GaN) 纳米片的生长和测量其压电特性. 这些2D GaN材料显示了先进电子和能源采集应用的潜力.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

化 (GaN) 对光学和光电子学具有出色的物理性能.
与纳米线和纳米管相比,对GaN纳米板的压电性能的研究是有限的.

研究的目的:

开发一种用于生长2D GaN纳米片的方法.
为了研究这些GaN纳米板的压电特性和Schottky屏障调制.

主要方法:

在Ga/W液相基板上化学蒸气沉积,用于生长2DGaN纳米板.
扫描探头技术用于测量压电常数和肖特基屏障调制.

主要成果:

成功地生长了700纳米厚的GaN纳米片.
测量了1.53 ± 0.21 pm V-1 的压电常数 (d_eff33).
通过GaN纳米板来证明Schottky屏障的有效调节.

结论:

2D GaN纳米板提供了新的压电特性.
这些特性为能源采集,电子,传感和通信领域的应用开辟了新的途径.

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