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01:31Dielectric Polarization in a Capacitor
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The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
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01:25MOS Capacitor
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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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01:20Design Example: Capacitance Multiplier Circuit
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In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
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基于五维三值memristor混乱系统的可变参数彩色图像加密的研究
1School of Electronics and Information Engineering, Heilongjiang University of Science and Technology, Harbin 150022, China.
Entropy (Basel, Switzerland)
|July 26, 2024
概括
一个新的五维三值memristor混乱系统增强了图像安全性. 这种复杂的混乱系统可以实现具有可变参数的安全图像加密方案,为敏感数据提供强大的保护.
科学领域:
- 非线性动力学和混沌理论
- 信息安全和密码学
- 基于memristor的系统
背景情况:
- 现有的混乱系统缺乏足够复杂的高级安全应用程序.
- 记忆器设备为构建复杂的动态系统提供了独特的特性.
- 图像加密需要强大的混乱系统,能够生成复杂的伪随机序列.
研究的目的:
- 构建一个新的五维三值memristor混乱系统,具有高度复杂性.
- 分析拟议的混乱系统的复杂动态行为.
- 开发和评估基于新混沌系统的安全彩色图像加密方案.
主要方法:
- 在伪四翼混乱系统中引入压力控制的三值记忆器.
- 使用利亚普诺夫指数,分叉图和相位图分析系统动态.
- 实现非线性反控制以实现系统同步.
- 开发一个可变参数图像加密方案,涉及序列生成,扩散和DNA加密.
主要成果:
- 新系统表现出丰富的动态行为,包括周期性极限环,可变的气形和短暂的混乱.
- 在Simulink中使用动态电路成功模拟混乱系统.
- 拟议的图像加密方案证明了对各种攻击 (差异,噪声,几何) 的高安全性.
- 使用直方图,信息和相邻像素相关性来分析加密有效性.
结论:
- 构建的五维三价值的memristor混乱系统具有高度复杂性和丰富的动态.
- 拟议的可变参数图像加密方案提供了高度的安全性.
- 该加密方法适用于医疗,军事和金融领域的应用,需要严格的安全性.