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石墨烯和WSiGeN₄之间的自我形成的不对称的肖特基接触

Dingbo Zhang^1,2, Fengai Zhao², Hongyan Wang^1,2

¹Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, School of Materials Science and Engineering, Southwest Jiaotong University, 610031 Chengdu, China. yuxiang.ni@swjtu.edu.cn.

Physical chemistry chemical physics : PCCP

|July 26, 2024

概括

这项研究探讨了WSiGeN4 / 石墨烯异构结构,揭示了不对称设备的可调 Schottky 接触. 这些结构通过控制电流流量,显示出新型电子应用的潜力.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

二维 (2D) 材料和异构结构具有独特的电子特性.
斯科特基接口在设备性能方面发挥着至关重要的作用.
控制接触型 (p型或n型) 是先进电子设备的关键.

研究的目的:

为了研究WSiGeN4/石墨烯异构结构的电子特性和传输特性.
设计和分析一个不对称的范德瓦尔斯 (vdW) 金属-半导体-金属 (MSM) 结构.
了解观察到的电流电压不对称背后的物理机制.

主要方法:

第一原则计算.第一原则计算.
量子运输方法. 量子运输方法.
分析带结构和电流-电压 (I-V) 曲线.

主要成果:

基于堆叠的WSiGeN4/石墨烯异构结构表现出可调节的p型或n型肖特基接触.
一个设计的不对称 vdW MSM 结构显示了一个明显的不对称 I-V 曲线.
载体运输主要由阳性偏差处的热电刺激和负偏差处的道运输主导.

结论:

不对称的肖特基屏障可以使用WSiGeN4/石墨烯异构结构集成到MSM设备中.
这项工作为开发基于Janus 2D半导体的新型电子设备提供了基础.
这些发现为利用受控载体运输的先进应用铺平了道路.

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