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Updated: Jun 19, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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无尽的迪拉克节点线和高移动性在Kagome半金属Ni3In2Se2:一个理论和实验研究

Sanand Kumar Pradhan1, Sharadnarayan Pradhan1, Priyanath Mal2

  • 1Department of Pure and Applied Physics, Guru Ghasidas Vishwavidyalaya, Koni, Bilaspur 495009, C. G., India.

Journal of physics. Condensed matter : an Institute of Physics journal
|July 26, 2024
PubMed
概括

这项研究揭示了Ni3In2Se2是一种kagome拓半金属,具有独特的电子特性. 它的带结构和运输行为表明了先进量子材料应用的潜力.

关键词:
卡戈梅格子格子 卡戈梅格子节点线节点线拓性的半金属.

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