在HfO2电影中对接口质量的评估,由时间依赖的第二和代探测
Libo Zhang1,2, Li Ye1,2, Weiwei Zhao3
1Center of Free Electron Laser & High Magnetic Field, Leibniz International Joint Research Center of Materials Sciences of Anhui Province, Anhui University, Hefei 230601, China.
Materials (Basel, Switzerland)
|July 27, 2024
概括
时间依赖的第二和生成 (TD-SHG) 提供了一种快速,非接触的方法来评估氧化物/Si异构接口. 这项技术将SHG信号与固定电荷密度和接口状态密度相关联,用于半导体质量控制.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 光电学是指光电子产品.
背景情况:
- 氧化物/异构在半导体设备中至关重要.
- 接口电场显著影响设备性能.
- 准确的接口质量评估对于可靠的半导体制造至关重要.
研究的目的:
- 调查依赖时间的第二和生成 (TD-SHG) 对于评估Si基板上的HfO2膜的接口质量的实用性.
- 为了将TD-SHG参数与传统电气表征指标相关联.
主要方法:
- 作为一种表征技术,利用了依赖时间的第二和生成 (TD-SHG).
- 使用原子层沉积,在Si基板上沉积HfO2膜.
- 将TD-SHG初始信号和时间常数与固定电荷密度 (Qox) 和接口状态密度 (Dit) 进行比较.
主要成果:
- 最初的SHG信号显示,随着Qox的增加,线性下降.
- 特性时间常数与Dit.线性相关.
- TD-SHG对接口属性表现出敏感性.
结论:
- TD-SHG是一种灵敏,快速,简单和非接触的方法,用于评估氧化物/Si异构界面质量.
- 该方法显示了在线半导体测试和质量控制的潜力.
- TD-SHG为传统的电气表征方法提供了有价值的替代方案.
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