使用多材料拓优化,设计具有特定频段间隙的局部共振声学元材料
Hongfang Chen1, Yu Fu1, Ling Ling1
1State Key Lab of Intelligent Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
Materials (Basel, Switzerland)
|July 27, 2024
概括
本研究引入了局部共振声学元材料 (LRAM) 的新多材料设计方法,以实现特定频段间隙. 这种方法可以精确地控制LRAM属性,以定位振动和噪声减弱.
科学领域:
- 声学 声学 在声学方面
- 材料科学 材料科学 材料科学
- 拓优化拓的优化
背景情况:
- 局部共振声学元材料 (LRAM) 提供了潜在的亚波长频段间隙.
- 目前的研究往往缺乏用于设计具有特定,有针对性的频段差距至关重要的LRAM的方法,这些差距对于实际应用至关重要.
研究的目的:
- 开发一个参数化的基于水平集的拓优化方法,用于设计具有指定频段间隙的多材料LRAM.
- 为了在需要目标频率减弱的应用中精确控制LRAM属性.
主要方法:
- 一个参数化的基于水平集的拓优化框架,使用多种材料.
- 简化带隙计算使用同质化框架与受限制和不受限制的子系统,避免Brillouin区域依赖.
- 一个多材料表示模型,使用组合级别设置函数来实现高效的材料转换.
主要成果:
- 在设计具有特定频段间隙的LRAM时,使用三和四材料示例证明了有效性.
- 成功解决了优化问题,包括在一个频率范围内最大限度地提高带间隙宽度,并设计具有目标带间隙的轻量级LRAM.
- 验证了该方法在LRAM设计中实现所需频率约束的能力.
结论:
- 拟议的方法为设计具有精确控制带间隙的LRAM提供了一个强大的工具.
- 这种方法对于开发先进的超材料来有效减弱特定频谱,如机械振动和环境噪声,具有显著的前景.
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