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基于SiC的功率MOSFET中的正偏差温度不稳定性

Vladislav Volosov¹, Santina Bevilacqua², Laura Anoldo²

¹Advanced Research Center on Electronic System, Department of Electrical, Electronic and Information Engineering, University of Bologna, 47522 Cesena, Italy.

|July 27, 2024

概括

碳化 (SiC) 功率MOSFET中的正偏差温度不稳定性 (PBTI) 涉及缺陷的捕获和创建. 了解这些机制是优化SiC设备可靠性的关键.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
半导体物理半导体物理

背景情况:

碳化 (SiC) 功率 MOSFET 在高功率应用中至关重要.
积极偏差温度不稳定性 (PBTI) 是这些设备的一个重大可靠性问题.
了解PBTI机制对于改善设备寿命至关重要.

研究的目的:

为了研究在SiC功率MOSFET中由PBTI引起的门电压转移 (ΔVTH).
阐明有助于ΔVTH降解的独特物理机制.
为提高SiC电源设备的可靠性提供见解.

主要方法:

在150°C的各种门应力电压 (VGstress) 下分析 ΔVTH.
使用不同的表征方法来区分缺陷机制.
应用功率定律模型来描述永久的 ΔVTH 退化.

主要成果:

确定了两个主要的PBTI机制:在先前存在的接口/边界缺陷中捕获和氧化物缺陷的产生/在更深的状态中捕获 (~80 meV激活能量).
鉴定方法揭示了每个机制在 ΔVTH 转移中的具体作用.
在不同的VG压力级别中观察到一致的永久 ΔVTH 降解行为,通过功率定律准确建模.

结论:

这项研究加深了对PBTI在SiC功率MOSFET中的理解.
明显的缺陷机制有助于值电压的不稳定.
研究结果为优化SiC电源设备的可靠性和性能提供了宝贵的见解.

关键词:

在 VTH 特性描述中.缺陷缺陷缺陷缺陷缺陷可靠性的可靠性碳化MOSFET的使用方法门电压的不稳定性门电压不稳定性捕捉/解锁机制捕捉/解锁机制

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