有限峰值电流的单一事件短暂效应的高效建模:对逻辑电路的含义
Yujian Wang1, Hongliang Lu1, Caozhen Yang1
1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education Ministry, School of Microelectronics, Xidian University, Xi'an 710071, China.
Micromachines
|July 27, 2024
概括
一个新的双指数过渡电流模型 (PDE模型) 准确地预测逻辑单元中的软误差率 (SER). 这种模型克服了传统的双指数模型的高估问题,提供了更现实的SER计算.
科学领域:
- 电气工程 电气工程
- 计算机工程 计算机工程
- 半导体物理 半导体物理
背景情况:
- 传统的双指数 (DE) 模型可以高估逻辑单元中的软误差率 (SER) 由于电路过度驱动.
- 准确的SER预测对于可靠的集成电路设计至关重要.
研究的目的:
- 为准确的SER预测引入和验证一个新的零碎双指数过渡电流模型 (PDE模型).
- 为了解决与DE模型相关的高估问题.
主要方法:
- 开发并实施PDE模型来表征短暂电流脉冲.
- 使用了来自28nm过程库和单元格布局的TCAD (技术计算机辅助设计) 模型.
- 校准了设备传输特征曲线,并进行了功能定时验证.
- 采用了布局意识单一事件多过渡软错误率计算 (LA-SEMT-SER) 工具来评估SER.
主要成果:
- 与DE模型相比,PDE模型对单事件短暂电流的TCAD模拟表现出更好的一致性.
- 使用PDE模型与LA-SEMT-SER工具进行的SER计算显示出比使用DE模型计算的误差小.
结论:
- PDE模型提供了一个更准确的方法来预测SER,通过分片表征和峰值电流限制.
- 这种改进的准确性导致更可靠的逻辑单元软误差率估计,提高电路设计.
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