基于和SiGe的量子设备的交叉架构调整使用机器学习
B Severin1, D T Lennon1, L C Camenzind2
1Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK.
Scientific reports
|July 27, 2024
概括
机器学习自动化了量子设备调整,克服了和-量子电路的变化. 这种方法简化了对各种量子计算硬件的校准.
科学领域:
- 量子计算是一种量子计算.
- 半导体设备物理 半导体设备物理
- 机器学习应用 机器学习应用
背景情况:
- 基于 (Si) 和- (SiGe) 的设备的变化阻碍了量子电路的缩放.
- 单个量子设备需要独特的调协议以实现最佳运行.
- 设备校准是开发可扩展量子技术的关键瓶.
研究的目的:
- 展示一种通用的机器学习算法,用于自动化量子设备调整.
- 为了减少与校准各种量子计算硬件相关的时间和复杂性.
- 为了描述双量子点设备的参数空间景观.
主要方法:
- 开发和应用单一的机器学习算法,用于自动调整.
- 在三个不同的量子设备上测试算法:四门Si FinFET,五门GeSi纳米线和七门Ge/SiGe异构双量子点.
- 调整时间和参数空间景观的分析,以评估算法性能并提供设备洞察力.
主要成果:
- 使用相同的算法,从头开始成功地对所有测试设备进行自动调整.
- 实现了快速调时间:Si FinFET 30分钟,GeSi纳米线 10分钟,Ge/SiGe双量子点 92分钟.
- 该算法揭示了双量子点操作的关键参数空间区域,有助于设备的表征.
结论:
- 机器学习为调整各种量子设备提供了统一而高效的解决方案.
- 自动调整大大缩短了校准时间,加速了量子电路的发展.
- 这种方法解决了设备的可变性,为可扩展的量子计算架构铺平了道路.
相关概念视频
Ampere-Maxwell's Law: Problem-Solving
597
A parallel-plate capacitor with capacitance C, whose plates have area A and separation distance d, is connected to a resistor R and a battery of voltage V. The current starts to flow at t = 0. What is the displacement current between the capacitor plates at time t? From the properties of the capacitor, what is the corresponding real current?
To solve the problem, we can use the equations from the analysis of an RC circuit and Maxwell's version of Ampère's law.
For the first part of...
To solve the problem, we can use the equations from the analysis of an RC circuit and Maxwell's version of Ampère's law.
For the first part of...
597
Biasing of Metal-Semiconductor Junctions
235
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
235


