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Updated: Jul 7, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Published on: November 1, 2013

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来自GaAs/AlGaAs核心外纳米线的室温近红外激光,基于随机空腔

Bingheng Meng1,2, Yubin Kang1, Xuanyu Zhang2

  • 1State Key Laboratory of High Power Semiconductor Laser, School of Physics, Changchun University of Science and Technology, Changchun, Jilin 130022, P. R. China.

ACS applied materials & interfaces
|July 29, 2024
PubMed
概括

在化纳米线 (NW) 中实现室温激光对纳米光子学至关重要. 这项研究证明了GaAs/AlGaAs核心NWs的室温随机激光成功,为光电子集成铺平了道路.

关键词:
在GaAs纳米线上核心外纳米线 核心外纳米线缺陷 缺陷 缺陷 缺陷 缺陷光学属性是指光学属性的一个随机的空洞.

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Atomic Spectroscopy: Effects of Temperature01:27

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Atomization, converting samples into gas-phase atoms and ions, is essential for atomic spectroscopy. The flame temperature required for atomization affects the efficiency of the atomic spectroscopic methods by increasing the atomization efficiency and the relative population of the excited and ground states.
At thermal equilibrium, the relative populations of excited and ground state atoms can be estimated using the Maxwell–Boltzmann distribution. For example, an increase in temperature from...