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Updated: Jul 28, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

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微波共振器和双量子点在优化的反向等级Ge/SiGe异构结构上的示范

Arianna Nigro1, Eric Jutzi1, Fabian Oppliger2

  • 1Physics Department, University of Basel, Klingelbergstrasse 82, Basel CH-4056, Switzerland.

ACS applied electronic materials
|July 29, 2024
PubMed
概括

研究人员在一个新的异构结构上展示了兼容的量子井和超导共振器. 这一突破推动了使用 (Ge) 和- (SiGe) 材料的基于旋转的量子计算.

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相关概念视频

Fermi Level Dynamics01:12

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...