接口缺陷对a-ITGZO TFT在底部,顶部和双门的电气特性的影响
Mingu Kang1, Kyoungah Cho1, Minhyeok Seol1
1Department of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, 02841, Republic of Korea.
Heliyon
|July 29, 2024
概括
双门可显著提高无形-锡--氧化薄膜晶体管 (a-ITGZO TFT) 的性能,通过最大限度地减少接口缺陷. 接口处的氧气不足极大地影响了场效应的移动性和下值的摆动.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体物理 半导体物理
背景情况:
- 无形-锡--氧化物 (a-ITGZO) 是薄膜晶体管 (TFT) 的一个有前途的材料.
- 接口缺陷,特别是缺氧,可以显著降低TFT的电气特性.
- 门策略 (底部,顶部,双) 通过改变接口环境来影响设备性能.
研究的目的:
- 调查接口缺陷对a-ITGZO TFT电气性能的影响.
- 为了比较a-ITGZO TFT在底部,顶部和双门配置下的性能.
- 阐明在介电接口和通道层内缺氧的作用.
主要方法:
- 具有底部,顶部和双门的a-ITGZO TFTs的制造和电气特性.
- 分析不同门条件下的场效应移动性和下值波动.
- 电气性能与在接口和通道中缺氧的普遍性相关.
主要成果:
- 双门产生的性能优越:场效应移动性为27.3cm2/V·s和222mV/十年的下值摆动.
- 顶部和底部门显示出明显较低的移动性 (分别为12.6和11.1cm2/V·s) 和更高的下值摆动 (分别为301和487mV/十年).
- 氧气缺陷在底门介电接口上更为集中,在通道内不太普遍,直接与流动性降低和切换特征受损相关.
结论:
- 接口缺陷工程,特别是管理缺氧,对于优化ITGZO TFT性能至关重要.
- 双门为减轻接口缺陷的有害影响提供了显著的优势,从而提高了电气特性.
- 了解缺氧分布,可以了解设备降解机制,并指导未来的材料和设备设计.
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