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基于磁道连接的计算随机访问内存的实验演示
Yang Lv1, Brandon R Zink1, Robert P Bloom1
1Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA.
Npj unconventional computing
|July 31, 2024
概括
计算随机访问存储器 (CRAM) 为机器智能的能源需求提供了解决方案. 这项研究通过实验证明了CRAM使用磁道连接,证实了它对关键计算的准确性.
科学领域:
- 计算机工程 计算机工程
- 材料科学 材料科学 材料科学
- 人工智能的人工智能
背景情况:
- 传统计算由于数据传输能源成本而面临局限性,阻碍机器智能应用.
- 计算随机访问存储器 (CRAM) 将逻辑操作集成到内存单元中,减少数据的移动.
- 之前的研究确立了CRAM的理论能量和性能优势,但缺乏实验准确性验证.
研究的目的:
- 通过实验证明和评估CRAM数组的计算精度.
- 评估CRAM技术在实际应用中的可行性和竞争力.
- 为了验证CRAM在机器智能的基本计算任务中的性能.
主要方法:
- 使用磁道连接 (MTJs) 制造了一个实验CRAM阵列.
- 执行和分析了基本的内存和逻辑操作 (2,3,和5输入).
- 一个1位的完整加法器被实施并使用两个不同的设计进行了测试.
- 基于实验数据,开发了模型来描述CRAM计算精度.
主要成果:
- 基于MTJ的CRAM的成功实验演示,包括内存和逻辑操作.
- 实现和验证1位完整加法器,展示CRAM的功能功能.
- 对标量加法,乘法和矩阵乘法的评估表明了有希望的准确性.
- 开发的模型为理解和量化CRAM计算精度提供了一个框架.
结论:
- 基于MTJ的CRAM已经通过实验验证其计算精度.
- 经过证明的准确性支持CRAM对电力和能效机器智能产生重大影响的潜力.
- 这项工作为CRAM的技术进步提供了关键的实验基础.
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