铁电公司Al0.85Sc0.15N和Hf0.5Zr0.5O2域切换动力学
Roberto Guido1, Xuetao Wang1, Bohan Xu1
1NaMLab gGmbH, Noethnitzer Strasse 64a, 01187 Dresden, Germany.
ACS applied materials & interfaces
|July 31, 2024
概括
铁电材料显示出高密度内存的前景. 这项研究研究了酸和氧化的域切换动态,揭示了对多位记忆控制至关重要的独特机制.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 纳米技术 纳米技术
背景情况:
- 铁电材料为高密度横条阵列中的多位存储元件提供了潜力,这对于基于边缘的神经网络至关重要.
- 了解域切换动态对于控制多位铁电记忆能力至关重要.
研究的目的:
- 在AlScN和HfZrO的极化逆转过程中调查和解域核和域壁运动.
- 将切换动态与AlScN和HfZrO的晶体结构和材料特性相关联.
主要方法:
- 用过渡电流集成测量来分析域动态.
- 分析了依赖时间的正常化交换极化变化速率,以解域核和墙壁运动.
- 切换动态与AlScN和HfZrO膜的晶体结构相关.
主要成果:
- AlScN切换动态的特点是热激活的爬行域墙壁运动,归因于其c轴纹理和单相性质.
- HfZrO切换动态涉及独立的域核和域壁爬行,受材料不均质,多态和缺陷的影响.
- 在 AlScN 中的缺陷导致双极循环后的域壁固定,而 HfZrO 中的唤醒效应与可切换区域的添加有关.
结论:
- 在AlScN和HfZrO中,域切换机制因其独特的晶体结构和缺陷配置文件而显著不同.
- 定制材料特性和理解缺陷行为对于优化多位铁电内存性能至关重要.
- 这项研究为高级内存应用程序的控制域动态提供了洞察力.
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