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相关概念视频

Diode: Reverse bias01:14

Diode: Reverse bias

659
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
659
Modeling of Diode Reverse Characteristics01:14

Modeling of Diode Reverse Characteristics

252
In electronic circuits, reverse-biased diode configurations are critical for regulating voltage levels. Zener diodes exploit the reverse breakdown phenomenon and exhibit a controlled breakdown at a specific Zener voltage (VZ). They are designed to maintain a constant voltage across their terminals and are commonly used for voltage regulation in circuits.
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...
252
Schottky Barrier Diode01:27

Schottky Barrier Diode

327
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
327
Superconductor01:24

Superconductor

1.1K
A substance that reaches superconductivity, a state in which magnetic fields cannot penetrate, and there is no electrical resistance, is referred to as a superconductor. In 1911, Heike Kamerlingh Onnes of Leiden University, a Dutch physicist, observed a relation between the temperature and the resistance of the element mercury. The mercury sample was then cooled in liquid helium to study the linear dependence of resistance on temperature. It was observed that, as the temperature decreased, the...
1.1K
Non-ohmic Devices00:51

Non-ohmic Devices

1.1K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.1K
Diode: Forward bias01:20

Diode: Forward bias

968
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
968

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在时间逆对称下,超导二极管效应在时间逆对称下.

Fengshuo Liu1,2, Yuki M Itahashi1, Shunta Aoki1

  • 1Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan.

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概括

应变工程使PbTaSe2具有超导二极管效应 (SDE),即使没有时间逆向对称性被打破,也证明了其内在性质. 这凸显了压力诱导的极化在SDE现象中的关键作用.

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科学领域:

  • 凝聚物质物理学 凝聚物质物理学
  • 材料科学 材料科学 材料科学

背景情况:

  • 超导二极管效应 (SDE) 允许根据电流方向交换超导和正常导电.
  • 在非中心对称超导体中观察到SDE,其反转和时间逆转对称性以前被认为是必不可少的.
  • 这些对称性在SDE中的内在作用仍然不清楚.

研究的目的:

  • 研究应变在实现超导二极管效应 (SDE) 的作用.
  • 为了在一个分层的三角超导体中探索SDE,PbTaSe2.2.
  • 阐明SDE的基本要求,特别是关于对称性破坏的基本要求.

主要方法:

  • 制造有压力和没有压力的PbTaSe2设备.
  • 电传输测量以检测超导二极管效应.
  • 沿着特定的晶体学方向 (扶手椅和齐克扎克) 施加受控应变.

主要成果:

  • 超导二极管效应 (SDE) 仅在应力PbTaSe2设备中观察到.
  • 在无压力装置中没有SDE,尽管三角形结构允许它.
  • 观察到取决于应变的SDE,零场或磁场偶/奇效应与应变和电流方向相关.

结论:

  • 应变诱导的电极化在实现内在超导二极管效应方面发挥着至关重要的作用.
  • 即使在时间逆向对称的情况下,SDE也可以存在,这挑战了以前的假设.
  • 这项工作为控制超导体中SDE的基本机制提供了新的见解.