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Updated: Jun 25, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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基于ReS2/h-BN/石墨烯异构结构的超快速多位内存

Haoyue Lu1, Yan Wang1, Xuchen Han1

  • 1State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin 300072, China.

ACS nano
|August 1, 2024
PubMed
概括

研究人员开发了一种使用ReS2 / h-BN / 石墨烯异构结构的新型浮动门内存设备. 这种先进的内存提供了超快的,多级非易失性存储,具有大内存窗口和高耐久性,显著提高了数据存储能力.

关键词:
ReS2 ReS2 ReS2 ReS2 ReS2 ReS2 ReS2 ReS2 ReS2 ReS2 ReS2 ReS2 ReS2 ReS2 ReS2 ReS2闪存记忆 闪存记忆是一种闪存记忆.多层次记忆状态表示多层次记忆状态.超快的运行速度超快的运行速度.范德瓦尔斯异构结构的异构结构

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