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在化半导体薄膜中,索雷特效应诱导的相变

Yi Shuang¹, Shunsuke Mori², Takuya Yamamoto³

¹WPI Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan.

|August 1, 2024

概括

研究人员开发了一种新的相变化,化 (CrN),用于相变随机访问存储器 (PCRAM). 这种材料比传统材料提供了显著更高的开/关比率和更低的重置能量.

科学领域:

材料科学材料科学材料科学
固态电子固态电子
纳米技术纳米技术

背景情况:

像Ge-Sb-Te (GST) 这样的相变材料对于相变随机访问存储器 (PCRAM) 应用至关重要.
目前基于 GST 的 PCRAM 的局限性包括低的 ON/OFF 比率和 RESET 过程的高能耗,阻碍了存储密度.
对于下一代存储器设备,需要先进的相变材料,具有改进的性能特征.

研究的目的:

引入和研究化 (CrN) 作为PCRAM的新型相变材料.
与传统的GST材料相比,评估CRN的编程窗口 (ON/OFF比率) 和RESET能量.
探索CrN中的相位过渡机制及其对下一代内存技术的潜力.

主要方法:

制造和CrN薄膜的特征.
电气测量以确定启/关比和开关能量.
高分辨率传输电子显微镜 (HRTEM) 用于分析相位过渡.
调查索雷特效应在诱导相变中的作用.

主要成果:

CrN表现出相变行为,ON/OFF比率超过10^5,明显高于GST.
与GST相比,CrN的RESET能量减少了一个数量级,表明功耗较低.
HRTEM证实了由索雷特效应引起的从立方CrN (低电阻) 到六角CrN2 (高电阻) 的相位过渡.

结论:

化 (CrN) 是先进PCRAM的一个有前途的相变材料.
CrN可以大大提高开启/关闭比率,并大大减少开关能量.
该材料为开发下一代PCRAM提供了可行的策略,其性能和存储密度得到了提高.

关键词:

在没有化的情况下.化物化物化物不易挥发的记忆无易挥发的记忆阶段变换材料的不同阶段变换材料.索雷特效应是一种效应.

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