概括
这项研究展示了使用晶圆结合的3D集成光子平台,为先进的光子集成电路提供了具有纳秒开关速度的紧电路.
科学领域:
- 光子学 是一个光子学.
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
背景情况:
- 三维 (3D) 集成对于开发紧而密集的光子集成电路 (PIC) 至关重要.
- 晶圆粘合为制造复杂的3D PIC提供了一个有前途的技术.
研究的目的:
- 通过晶圆粘合制造的3D集成光子平台进行演示.
- 在3D集成平台中评估光学元件的性能和切换速度.
主要方法:
- 使用晶圆粘接制造3D集成光子平台的制造.
- 在不同层中集成光学组件,如多模干扰 (MMI),波导交叉和基于马赫-泽恩德干扰仪 (MZI) 的开关.
- 介层合损失,交叉声和开关响应时间的表征.
主要成果:
- 平台的所有层都是使用c-Si制造的,以确保纳米秒响应时间的高载体流动性.
- 层间合器和交叉器实现了低0.98dB的合损失和<-43.58dB的交叉声.
- 层内部交叉显示<-36.00 dB交叉声,并证实了纳米秒级的切换.
结论:
- 展示的晶圆结合3D光子平台使高性能光学元件和快速切换成为可能.
- 这种方法适用于实现具有先进功能的紧和密集的PIC.
相关概念视频
01:25MOS Capacitor
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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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01:22MOSFET: Enhancement Mode
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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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