通过电荷转移稳定Hf_{0.5}Zr_{0.5}O_{2}薄膜的铁电相

Shu Shi1, Tengfei Cao2, Haolong Xi3,4

  • 1Department of Materials Science and Engineering, <a href="https://ror.org/01tgyzw49">National University of Singapore</a>, 117575 Singapore, Singapore.

PubMed
概括

稳定CMOS设备的铁电哈夫尼亚基薄膜 (HZO) 是通过界面电荷转移实现的. 通过兰,和氧化物缓冲层进行最佳的孔兴奋剂可以增强铁电相稳定性.

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