通过电荷转移稳定Hf_{0.5}Zr_{0.5}O_{2}薄膜的铁电相
Shu Shi1, Tengfei Cao2, Haolong Xi3,4
1Department of Materials Science and Engineering, <a href="https://ror.org/01tgyzw49">National University of Singapore</a>, 117575 Singapore, Singapore.
Physical review letters
|August 2, 2024
概括
稳定CMOS设备的铁电哈夫尼亚基薄膜 (HZO) 是通过界面电荷转移实现的. 通过兰,和氧化物缓冲层进行最佳的孔兴奋剂可以增强铁电相稳定性.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 纳米技术纳米技术
背景情况:
- 基于铁电哈夫尼亚的薄膜对于CMOS兼容的电子设备至关重要.
- 稳定这些薄膜中的元稳定铁电相是一个关键的挑战.
- 了解稳定机制对于设备应用至关重要.
研究的目的:
- 通过实验证明控制Hf_{0.5}Zr_{0.5}O_{2} (HZO) 薄膜中的铁电相稳定.
- 调查HZO铁电中接口电荷转移和孔的作用.
- 为了确定一个最佳的缓冲层组成,以提高铁电相稳定性.
主要方法:
- 制造具有 La_{1-x}Sr_{x}MnO_{3}缓冲层的 Hf_{0.5}Zr_{0.5}O_{2} 薄膜.
- 缓冲层中度 (x) 的系统变化.
- 电荷转移和铁电特性的实验性表征和理论建模.
主要成果:
- 在HZO中铁电相稳定是通过界面电荷转移和孔补充控制的.
- 在La_{1-x}Sr_{x}MnO_{3}缓冲层中确定了x=0.33的最佳度,以实现最大的铁电稳定.
- 理论建模证实,氧位点上的孔分布决定了铁电相稳定性.
结论:
- 通过电荷转移进行接口工程,为稳定基于铁电哈夫尼亚的薄膜提供了一种新的策略.
- 在HZO中在特定的氧气位点进行孔是铁电相增强的关键.
- 这些发现推动了CMOS兼容铁电器件的开发.
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