在高流动性氧化薄膜晶体管中可靠运行
Prashant R Ghediya1, Yusaku Magari1, Hikaru Sadahira2
1Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo, 001-0020, Japan.
Small methods
|August 3, 2024
概括
使用Y2O3和Er2O3膜的新被动化方法显著提高了氧化 (In2O3) 薄膜晶体管 (TFT) 的可靠性. 这些增强的In2O3 TFT显示器没有值电压变化,为稳定的下一代显示器铺平了道路.
科学领域:
- 材料科学 材料科学 材料科学
- 电子工程 电子工程
- 半导体物理 半导体物理
背景情况:
- 透明氧化物半导体 (TOS) 对于下一代显示器至关重要,氧化物 (In2O3) 薄膜晶体管 (TFT) 显示出高场效移动性 (μFE).
- 然而,In2O3 TFTs存在运行不稳定性,特别是因气体分子相互作用而导致的门偏差下的门电压变化,阻碍了它们的实际应用.
研究的目的:
- 调查In2O3 TFT的新型被动化策略,以提高其运行稳定性和可靠性.
- 为了识别防止在应用门偏差下值电压转移的被动化材料.
主要方法:
- 使用各种绝缘氧化物薄膜,包括Y2O3和Er2O3.3,对In2O3TFT进行被动化.
- 积极和消极门偏差的应用,以评估设备稳定性和值电压变化.
- 对In2O3和被动化层之间的晶体生长和接口特性进行分析,特别关注异质形生长.
主要成果:
- 用Y2O3和Er2O3薄膜被动化的In2O3TFT显示出高可靠性,在应用门偏差下没有出现值电压变化.
- 其他被动化材料无法防止这些电压变化,突出显示了Y2O3和Er2O3.3的独特有效性.
- 在In2O3晶体上观察到Y2O3的异质生长,与增强的设备稳定性相关.
结论:
- Y2O3和Er2O3被动化层有效地稳定In2O3 TFT,防止值电压变化,这是由于它们独特的接口特性和异质增长.
- 这一可靠性的突破加速了使用高性能In2O3 TFT的先进显示器的发展.
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