原始和合的石墨碳化纳米网的电子特性
Sarah Gamal1, M Nashaat1,2, Lobna M Salah1
1Department of Physics, Faculty of Science, Cairo University, Cairo 12613, Egypt.
Physical chemistry chemical physics : PCCP
|August 7, 2024
概括
多孔石墨碳化物 (g-GeC) 材料具有可调节的电子特性. 消极和兴奋剂影响带隙,表明传感和自旋电子应用的潜力.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 计算化学的计算化学
背景情况:
- 石墨碳化物 (g-GeC) 是一种新兴材料,具有重大研究兴趣.
- 通过将毛孔引入原始g-GeC中,可以合成多孔g-GeC结构.
研究的目的:
- 系统地研究孔隙形成和被动化对g-GeC电子特性的影响.
- 探索在新型电子应用中以N-无源化g-GeC进行过渡金属兴奋剂的潜力.
主要方法:
- 用密度函数理论 (DFT) 的计算来研究g-GeC系统.
- 纯净的g-GeC通过引入,或氧被动化的孔进行了修改.
- 用Ni,Pd和Pt三原子集群进行化兴奋剂的研究对N-被动化g-GeC进行了研究.
主要成果:
- 无源化显著降低了g-GeC的带隙,值在1.18 eV到1.93 eV之间,取决于无源化剂和超级细胞大小.
- 在带边缘附近观察到电荷捕获状态,定位在孔边缘原子.
- 用Ni,Pd和Pt合的N-无源化g-GeC系统表现出稀释的磁性半导体特性.
结论:
- 多孔g-GeC材料通过孔隙工程和被动化提供可调节的电子特性.
- 观察到的电子特征表明在传感和自旋电子学中的潜在应用.
- 化兴奋剂引入磁性,扩大了g-GeC纳米结构的应用范围.
更多相关视频
11:21Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes
Published on: March 21, 2018
8.1K
06:57Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
2.2K
相关概念视频
Network Covalent Solids
13.4K
Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
13.4K
Types of Semiconductors
577
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
577
