单层MoS2电场效应晶体管的低接触电阻通过CMOS兼容金属接触器实现
Zheng Sun1,2, Seong Yeoul Kim3, Jun Cai1,2
1School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States.
ACS nano
|August 7, 2024
概括
在单层MoS2晶体管中实现低接触电阻至关重要. 与高真空相比,超高真空沉积的Ni接触器显著降低了接触电阻,与改进的接口化学相关.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 固态物理 固态物理
背景情况:
- 对于先进的晶体管来说,单层 (ML) 半导体过渡金属二化物 (TMD) 的接触工程至关重要.
- 费米级固定和舒特基屏障限制了ML TMD场效应晶体管 (FET) 的性能.
- 接口缺陷和反应点对ML TMD FET电气性能的影响尚不清楚.
研究的目的:
- 研究ML TMD FET中的接触电阻与接口化学的依赖性.
- 为了将电气测量与表面分析相关联,以了解接触形成.
- 探索不同接触金属的热稳定性和可靠性.
主要方法:
- 超过120毫升的MoS2FET的制造和电气特性.
- 使用X射线光电子谱学 (XPS) 进行表面分析.
- 在超高真空 (UHV) 和高真空 (HV) 条件下,Ni和Bi接触物的沉积.
主要成果:
- 实现了ML MoS2 FETs与UHV沉积Ni接触器的 ~500 Ω·μm的接触电阻,比HV沉积接触器低5倍.
- 在超高温下,XPS揭示了显著的Ni-MoS2结合,与较低的接触电阻相关.
- 在UHV和HV条件下,在Bi接触时,没有观察到接触电阻或接口化学的显著差异.
结论:
- 由于增强的接口化学,Ni的超高温沉积对于在ML MoS2 FET中实现低接触电阻至关重要.
- 接触金属的选择极大地影响了接口特性和产生的设备性能.
- 进一步研究接触工程对于实现高性能MLTMD电子设备至关重要.
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