相关实验视频

Updated: Jun 17, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.6K

在金属半导体纳米连接中,对等离子体诱导的单分子切换进行原子精度控制

Youngwook Park1, Ikutaro Hamada2, Adnan Hammud3

  • 1Department of Physical Chemistry, Fritz-Haber Institute of the Max-Planck Society, Berlin, Germany. park@fhi-berlin.mpg.de.

Nature communications
|August 7, 2024
PubMed
概括

研究人员使用局部表面等离子体实现了光化学的原子级控制,用于单分子切换. 这为以前所未有的精度缩小光电子设备开辟了新的途径.

更多相关视频

Plasmonic Trapping and Release of Nanoparticles in a Monitoring Environment09:13

Plasmonic Trapping and Release of Nanoparticles in a Monitoring Environment

Published on: April 4, 2017

7.6K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.6K

相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
322