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Updated: Jun 17, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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一项关于二门介电面道场效应晶体管用于三元逆变器的研究

Aoxuan Wang1, Hongliang Lu1, Yuming Zhang1

  • 1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education Ministry, School of Microelectronics, Xidian University, Xi'an 710071, China.

Nanomaterials (Basel, Switzerland)
|August 9, 2024
PubMed
概括

一个新的双门介电面道场效应晶体管 (DGDFTFET) 能够实现三元计算的三个输出电压状态. 这种先进的设备在性能指标上明显优于传统的面道场效应晶体管 (FTFET).

关键词:
多个下值电压 (多个VTH)静态噪声边缘 (SNM) 是指静态噪声边缘的边缘.这是一个三元逆变器.道场效应晶体管 (TFET) 的使用

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