在 (101) 和 (110) 导向的RuO_{2} 片中,反向旋转霍尔效应主导了旋转电荷转换
1National Laboratory of Solid State Microstructures, Department of Physics, <a href="https://ror.org/01rxvg760">Nanjing University</a> and <a href="https://ror.org/04ttadj76">Collaborative Innovation Center of Advanced Microstructures</a>, Nanjing 210093, People's Republic of China.
这项研究比较了RuO2膜中的自旋电荷转换,发现 (110) 表面是同otropic 和更强,由反自旋霍尔效应驱动. 结果与之前的归因相反,通过自旋和自旋扭矩测量得到证实.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 旋转电荷转换对于旋转电子器件至关重要.
- 了解特定材料的机制是优化自旋电荷转换效率的关键.
研究的目的:
- 为了比较研究RuO2{10}和RuO2{110) 薄膜中的自旋电荷转换.
- 阐明这些材料中自旋电荷转换的潜在物理机制.
主要方法:
- 旋转的实验. 旋转的实验.
- 旋转扭矩铁磁共振 (ST-FMR) 的测量.
- 基于对称性的分析和第一原则的计算.
主要成果:
- RuO2{101}) 薄膜表现出强大的平面内晶体轴依赖性.
- RuO2 ((110) 薄膜显示出同位素的,但更强的自旋电荷转换.
- 逆旋转霍尔效应 (ISHE) 在两部电影中都占主导地位,RuO2中的逆旋转分裂效应 (ISSE) 可能与之共存.
- 在RuO2中的节点线分裂 () 已被确定为ISHE的起源.
结论:
- 在RuO2膜中用于旋电荷转换的主要机制是ISHE.
- 这些发现挑战了以前认为ISSE是主要机制的说法.
- 相互测量证实了自旋和ST-FMR的结果,为发现的机制提供了强有力的证据.
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