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Updated: Jun 17, 2025

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Ni-W 层在 Sn/Cu 界面反应中的扩散屏障性能

Jinye Yao1, Chenyu Li1, Min Shang1

  • 1School of Materials Science and Engineering, Dalian University of Technology, Dalian 116000, China.

Materials (Basel, Switzerland)
|August 10, 2024
PubMed
概括

这项研究研究了3D集成电路的Ni-W屏障层,发现它们最初阻碍了锡扩散,但由于Ni2WSn4形成,在高温下降解. 这会影响微电子设备中的接关节可靠性.

关键词:
在Ni-W层中.扩散扩散是一种扩散.电极位置的电极位置界面反应是界面反应.金属间化合物是金属间化合物.

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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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