在GaN中碳和杂质缺陷:通过第一原则模拟单光子发射器
Junxiao Yuan1,2, Jinglei Du1, Yidong Hou1
1Department of Physics, Sichuan University, Chengdu 610065, China.
Materials (Basel, Switzerland)
|August 10, 2024
概括
化 (GaN) 缺陷单光子发射器显示出对高速通信的承诺. 碳兴奋剂会产生NGaVNCN缺陷,这是一个运行在864 nm的快速单光子源.
科学领域:
- 材料科学 材料科学 材料科学
- 量子光学是一种量子光学.
- 固态物理 固态物理
背景情况:
- 在化 (GaN) 中的缺陷单光子发射器 (SPE) 具有室温操作,窄线宽和高亮度的吸引力.
- 由于许多潜在的内在缺陷,GaN中SPE背后的确切机制尚未完全理解.
研究的目的:
- 系统地调查GaN.中与常见剂 (碳,) 的缺陷相互作用.
- 为了识别新的,高速缺陷的单光子源.
- 为光子应用阐明特定三元缺陷的特性.
主要方法:
- 进行了ab initio计算,以研究缺陷的形成和特性.
- 密度函数理论 (DFT) 使用佩尔杜-伯克-恩泽霍夫 (PBE) 和海德-斯库塞里亚-恩泽霍夫 (HSE) 函数.
- 对缺陷能量水平,排放波长和寿命的分析.
主要成果:
- 一个三元缺陷,NGaVNCN,被确定为一个有前途的高速单光子源.
- 这种与碳相关的缺陷具有寿命 < 1 ns 和 864 nm 的零光子线 (ZPL).
- 一个与相关的缺陷,NGaVNSiN,由于其在导电带内的能量水平,被发现不合适.
结论:
- 对GaN的碳化可以创建高效,高速的单光子发射器,适合光纤通信.
- 涉及内在空缺和剂的三元缺陷是开发先进光子设备的关键.
- 对GaN的缺陷工程进行进一步的调查有可能为高性能单光子源提供潜力.
更多相关视频
07:103D Depth Profile Reconstruction of Segregated Impurities Using Secondary Ion Mass Spectrometry
Published on: April 29, 2020
1.7K
06:57Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
2.2K
相关概念视频
01:22Carrier Generation and Recombination
554
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
554
01:20Types of Semiconductors
577
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
577