光子深度残留时间延迟储存器计算计算

Changdi Zhou1, Yu Huang1, Yigong Yang1

  • 1School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China; Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, China.

概括

我们介绍了一种新的深度残留时间延迟储存器计算 (DR-TDRC) 架构,该架构显著增强了内存功能和非线性通道均等. 这种光子方法可以扩展到许多层,提高人工智能应用的性能.