通过MoS2涂层使GaN表面被动化

Danxuan Chen1, Jin Jiang2, Thomas F K Weatherley1

  • 1Laboratory of Advanced Semiconductors for Photonics and Electronics, Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.

Nano letters
|August 12, 2024
PubMed
概括

二维二硫化物 (MoS2) 涂层显著增强化/化 (GaN/AlGaN) 量子井 (QW) 的光辐射. 这种MoS2涂层起到有效的屏障作用,改善了III-化物表面被动化.