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极端紫外线光刻达到了5nm分辨率

Iason Giannopoulos¹, Iacopo Mochi¹, Michaela Vockenhuber¹

¹Paul Scherrer Institute, 5232 Villigen-PSI, Switzerland. iason.giannopoulos@psi.ch.

|August 12, 2024

概括

一个基于镜子的新型极紫外干扰光刻系统 (EUV-IL) 实现了5纳米半幅图案. 这种进步克服了格子限制,为未来的纳米技术提供了基于光子的最终分辨率.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
光学是什么?光学是什么?光学是什么?

背景情况:

极端紫外线 (EUV) 石版对于半导体制造至关重要,其目标是10nm以下半径 (HP) 节点.
使用格的传统EUV干扰光刻法 (EUV-IL) 在实现超高分辨率方面存在局限性.
下一代高数字光圈 (高NA) EUV扫描仪正在开发中,用于先进的CMOS生产.

研究的目的:

引入一种基于镜子的新型EUV-IL设置.
为了克服基于格子的EUV-IL的衍射效率限制.
为未来纳米技术应用展示超高分辨率的图案.

主要方法:

开发一种使用基于镜像技术的新型EUV-IL系统.
实施使用丝素 (HSQ) 抵抗的线路/空间图案.
测试与标准EUV波长 (13.5nm) 和更短波长的兼容性.

主要成果:

使用基于镜子的新型EUV-IL设置,实现了直线/空间图案到5nmHP.
证明了系统能够在标准EUV波长13.5nm时运行.
已确认与超出标准EUV范围的波长兼容.

结论:

基于镜子的EUV-IL方法绕过了格子限制,使射极限分辨率.
这项技术对于推进纳米科学,技术和未来的CMOS制造节点至关重要.
开发的系统为在EUV波长及以上的基于光子的最终分辨率铺平了道路.

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