通过NH3等离子处理对少层MoS2场效应晶体管进行调节性兴奋剂策略3
Mingu Kang1, Woonggi Hong2, Inseong Lee1
1School of Electrical Engineering, Graduate School of Semiconductor Technology, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, KAIST, Daehakro, Yuseong-gu, Daejeon 34141, Republic of Korea.
氨等离子处理使得可调节的二硫化物 (MoS) 2D 材料中的兴奋剂. 这种方法为n型兴奋剂和p型兴奋剂的替代产生硫空缺,这对于先进的电子技术至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 二硫化物 (MoS) 是下一代晶体管的关键二维材料,由于其优良的电气性能和薄结构.
- 传统的兴奋剂方法,如离子植入不适合超薄的二维材料,需要非破坏性的替代品.
研究的目的:
- 开发一种新的,非破坏性的方法,用于对MoS2进行可调的n型和p型兴奋剂.
- 为了研究NH3等离子体治疗时间对莫斯科的兴奋剂度和类型的影响2.
主要方法:
- 利用不同持续时间 (20秒和40秒) 的NH3等离子体治疗来化MoS2场效应晶体管 (FET).
- 采用电气表征 (板载体密度测量) 和表面分析技术 (X射线光电子光谱,拉曼光谱,光发光).
- 进行了取决于温度的测量,以分析Schottky屏障高度变化.
主要成果:
- 20秒的NH3等离子治疗导致n型兴奋剂,通过硫空缺增加载体密度4.92 × 10-11厘米-2.
- 治疗40秒诱导的p型兴奋剂,通过替代减小载体密度-3.71 × 1011 cm-2.
- 确认成功的n型和p型兴奋剂,并观察到舒特基屏障高度的变化 (n型为-31 meV,p型为+37 meV).
结论:
- 在MoS3中,NH3等离子治疗提供了一种可控制和非破坏性的方法,用于在MoS2中实现n型和p型的兴奋剂.
- 这种兴奋剂策略对于为先进的电子和光电子设备设计二维材料至关重要.
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