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Updated: Jul 10, 2026

Synthesis and Functionalization of 3D Nano-graphene Materials: Graphene Aerogels and Graphene Macro Assemblies
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伪电容器的分子转子与合协调纳米板:纳米架构学和增强性能

Vishwakarma Ravikumar Ramlal1,2, Kinjal B Patel1,2, Savan K Raj1

  • 1Analytical and Environmental Science Division and Centralized Instrument Facility, CSIR-Central Salt and Marine Chemicals Research Institute, Bhavnagar Gujarat, 364002, India.

Chemistry (Weinheim an der Bergstrasse, Germany)
|August 13, 2024
PubMed
概括

具有集成的氧化还原点的新型联合协调纳米片 (CNs) 为能量存储设备提供了高功率. RV-10-Co协调纳米片表现出异常的特异性容量和能量密度,在1000个循环中保持性能.

关键词:
协调聚合物的聚合物.分子旋转器分子旋转器一个纳米板.伪电容器 伪电容器四烯乙烯四烯四烯四烯四烯四烯四烯四烯四烯四烯四烯

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相关概念视频

Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...