六角化的化学蒸气沉积在来自博拉的上
Katherine A Su1, Songying Li1, Wei-Chen Wen2
1Department of Materials Science and Engineering, University of Wisconsin-Madison Madison Wisconsin 53706 USA michael.arnold@wisc.edu.
RSC advances
|August 14, 2024
概括
研究人员在 (Ge) 和 (Si) 基板上生长了六角化 (hBN). 抑制Ge升华和控制表面的方向是高质量的关键,对准了微电子的hBN增长.
科学领域:
- 材料科学 材料科学 材料科学
- 表面科学是一门学科.
- 微电子工程 微电子工程
背景情况:
- 六角化 (hBN) 在 (Ge) 和 (Si) 等半导体上直接生长对于先进的微电子学至关重要.
- 缺乏了解会阻碍hBN岛屿和单层在这些基板上的受控生长.
研究的目的:
- 通过高真空化学蒸气沉积,研究hBN在Ge和Ge/Si基板上的生长.
- 分析地质升华,表面取向和近距离对hBN岛屿特征和对齐的影响.
主要方法:
- 高真空化学蒸汽沉积 (HV-CVD) 使用博拉作为前体.
- 在Ge和Ge上hBN的生长在Si上.
- 系统地研究生长参数,包括Ge升华,表面方向和近距离.
主要成果:
- 抑制Ge升华对于实现高质量的hBN生长至关重要.
- 地形表面的方向和邻近性对hBN岛屿的排列有很大影响.
- 在Ge(111) 上观察到95%的hBN岛屿的单向对齐.
- 单层hBN在Ge和Ge/Si基板上通过优化生长时间和博拉部分压力成功生长.
结论:
- 在半导体基板上控制hBN的生长可以通过管理Ge升华和表面特性来实现.
- 这些发现为无金属和无转移的单晶hBN制造铺平了道路.
- 这项研究为将hBN集成到未来的微电子设备提供了宝贵的见解.
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