在拓性半金属候选物YbAuSbb中存在弱反局部化
D Ram1, S Banerjee2, A Sundaresan2
1Department of Physics, Indian Institute of Technology, Kanpur 208016, India.
概括
这项研究研究了YbAuSb单晶,揭示了金属行为和弱反局部化 (WAL) 效应. 洞式充电载体在运输中占主导地位,WAL由既有模型解释.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
背景情况:
- YbAuSb单晶是使用斯木流量方法合成的.
- X射线衍射证实了LiGaGe类型的六角结构 (空间组P63mc).
研究的目的:
- 为了研究YbAuSb.的磁性和磁传输特性.
- 了解观察到的磁阻现象的潜在机制.
主要方法:
- 磁性测量以确定磁性属性.
- 电电阻和霍尔效应测量.
- 在不同的磁场和温度下测量磁电阻.
主要成果:
- YbAuSb表现出与双价离子的非磁性行为.
- 金属电阻力和在低电场处的状磁电阻.
- 观察到弱反局部化 (WAL) 效应,在低温时显著.
- 通过修改的Hikami-Larkin-Nagaoka和Altshuler-Aronov模型来解释WAL.
- 孔载电荷载体的占主导地位,密度为~10^20 cm^-3和流动性为~10^2 cm^2 V^-1 s^-1.
结论:
- YbAuSb是一种金属化合物,具有显著的弱抗局部化作用.
- 磁传输特性与WAL现象和以孔为主导的传输相一致.
- 该研究提供了对基于Yb的金属间化合物的电子性质的见解.
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