在原子极限的扭转辅助全反铁磁道连接
Yuliang Chen1, Kartik Samanta2,3, Naafis A Shahed2,3
1Max Planck Institute of Microstructure Physics, Halle, Germany.
Nature
|August 14, 2024
概括
研究人员开发了一种使用二维反铁磁铁的全反铁磁道连接的新扭曲方法. 这种技术实现了高非挥发性道磁阻比,为原子极限磁性存储设备铺平了道路.
科学领域:
- 凝聚物质物理学
- 材料科学
- 机器人
背景情况:
- 抗铁磁自旋技术为高密度,超快速的信息设备提供了潜力.
- 抗铁磁材料越来越多地用于磁道连接 (MTJ).
研究的目的:
- 在原子尺度上创建全反铁磁道的扭曲策略.
- 为了研究扭曲的2D反铁磁材料的道磁阻 (TMR) 特性.
主要方法:
- 通过扭转二维反铁磁CrSBr的双层构建全反铁磁道连接点.
- 在零场测量非挥发性道磁阻 (TMR) 比率.
- 分析TMR对扭转角度和温度的依赖性.
主要成果:
- 在零场时使用扭曲的CRSBr双层实现了>700%的非挥发性TMR比率.
- 证明TMR源于跨越CRSBr单层的累积连贯道.
- 与未扭曲的相比,在扭曲的结节中观察到TMR的温度依赖性明显较弱.
结论:
- 一个扭曲策略使得在原子极限建造全反铁磁道交叉点成为可能.
- 扭曲的反铁磁道结道具有较高的TMR比率和更好的热稳定性.
- 这种方法将非挥发性磁性信息存储推向原子薄极限.
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