在拓磁单层CrSeBr中进行应变驱动的斯基米安-比米伦切换
Junhuang Yang1, Kaiying Dou1, Xinru Li1
1School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Str. 27, Jinan 250100, China. daiy60@sdu.edu.cn.
Materials horizons
|August 15, 2024
概括
外部应变使 CrSeBr 中的磁性 skyrmions 和 bimerons 之间的切换成为可能,为拓磁器件提供了一种新方法. 这种应变诱导的磁性异构性控制为磁场操纵提供了一个有希望的替代方案.
科学领域:
- 拓学磁力学 拓学磁力学
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
背景情况:
- 斯基尔米昂-比梅伦交换在拓磁力学中至关重要.
- 目前的方法依赖于磁场诱导的旋转重定位,这可能是繁的.
- 实际应用需要一种应变控制的替代方案.
研究的目的:
- 调查使用外部应变实现斯基米安-比梅伦切换的可行性.
- 阐明控制应变诱导切换的基本物理机制.
- 引入磁性 skyrmions 和 bimerons 的稳定性标准.
主要方法:
- 用第一原理计算来研究电子和磁性质.
- 用原子旋转模拟来建模切换动态.
- 分析的重点是应变工程电子状态和磁性异构性.
主要成果:
- 外部应变被证明可以有效地在单层CrSeBr.Br中切换磁性 skyrmions 和 bimerons.
- 切换机制通过费米水平状态与应变控制的磁性异质相关.
- 一个稳定性参数,κ,被引入为应变驱动切换的描述符.
结论:
- 在CrSeBr中可以实现压力控制的 skyrmion-bimeron 切换,为磁场提供了替代方案.
- 这些发现为拓磁现象的物理提供了洞察力.
- 这项研究有可能发展出新的拓磁器件.
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