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Updated: Jun 16, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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在nMOS逆变器中实现极高收益和低功率,基于单层WS2晶体管在下值模式下运行

Eunyeong Yang1, Sekwon Hong1, Jiwon Ma1

  • 1Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea.

ACS nano
|August 15, 2024
PubMed
概括

我们开发了高收益,低功耗的n型金属氧化物半导体 (nMOS) 逆变器,使用化学蒸汽沉积 (CVD) 培养的单层二硫化物 (WS2) 场效应晶体管 (FET). 这些WS2nMOS逆变器实现了显著的收益,并展示了先进逻辑电路的潜力.

关键词:
氧化的兴奋剂是氧化.高收益的高收益的高收益低功率的低功率电机在 nMOS 逆变器.在nMOS逻辑电路中,tungsten 硫化二氧化 的使用.两个维的材料是二维材料.

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