铁电化晶体管具有内在切换特征和人工突触功能,用于神经形态计算
Jing Gao1, Yu-Chieh Chien1, Lingqi Li1
1Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore.
Small (Weinheim an der Bergstrasse, Germany)
|August 16, 2024
概括
甘化 (AlScN) 通过一种新的核化机制表现出快速的铁电切换. 这种材料显示了可靠的神经形态计算应用的前景,在手写数字识别中实现了高精度.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 纳米技术 纳米技术
背景情况:
- 甘化 (AlScN) 以其铁电特性而闻名,但控制其动态反应和可靠性的基本机制尚未完全理解.
- 铁电材料对于先进的电子设备至关重要,包括内存和神经形态计算.
研究的目的:
- 揭示AlScN.中以前未经报道的基于核化的偏振切换机制.
- 调查故障和激活能对铁电开关动态和设备可靠性的影响.
- 通过开发铁电场效应晶体管 (FeFETs) 来证明AlScN在神经形态计算应用中的潜力.
主要方法:
- 在Al$_{0.7}$Sc$_{0.3}$N.N.中对极化切换动态的实验性表征.
- 使用核化有限切换 (NLS) 模型和蒙特卡洛模拟的模拟.
- 时间依赖的介电分解 (TDDB) 测量用于可靠性评估.
- 制造和测试AlScN/MoS$_{2}$异构的FeFET.
主要成果:
- 在AlScN中发现了一种基于核化的极化切换机制,由离子位移驱动.
- 快速偏振切换的观察,其特征时间为0.00183ps.
- 系统地研究缺陷对核和域传播的影响,以及激活能对切换值的影响.
- 演示基于AlScN的FeFET模拟生物突触功能,并在人工神经网络中实现93.8%的手写数字识别准确度.
结论:
- 这项研究揭示了AlScN中一种新的核化驱动的切换机制,解释了它的动态反应.
- AlScN 显示出卓越的长期可靠性和在电子设备中的扩展潜力.
- 基于AlScN的FeFET对节能神经形态计算应用非常有前途.
相关概念视频
MOSFET
434
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
434
MOSFET: Enhancement Mode
303
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
303
MOS Capacitor
741
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
741
Field Effect Transistor
343
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
343


