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基于道效应磁阻传感器的瓦米表

S Soriano-Díaz¹, D Ramírez-Muñoz¹, R García-Gil¹

¹Department of Electronic Engineering, University of Valencia, Avda. de la Universitat, s/n, 46100 Burjassot, Spain.

The Review of scientific instruments

|August 16, 2024

概括

磁道连接 (MTJ) 技术为电流和功率处理提供了具有竞争力的传感解决方案. 这项研究详细介绍了一台TMR Wheatstone桥梁传感器,展示了其性能和集成到电子瓦特表中的功能.

科学领域:

电气工程电气工程
材料科学材料科学材料科学
传感器技术传感器技术

背景情况:

磁道连接 (MTJ) 技术提供了独特的磁阻性能.
传统的电流和功率传感方法在精度和隔离方面存在局限性.
惠特斯通桥梁拓是用于敏感测量的常见配置.

研究的目的:

评估道效应磁阻 (TMR) 技术用于电流和功率传感的可行性.
为了描述基于TMR的Wheatstone桥梁传感器的电气和热性能.
开发和验证使用TMR传感技术的电子瓦米表.

主要方法:

使用多层磁道连接元件堆叠的TMR传感器的制造.
在使用气候室和专用仪器的情况下,在直流和交流电流条件下对传感器性能进行表征.
开发一种电子瓦特计电路,将TMR桥与模拟处理器进行接口.

主要成果:

TMR传感器的电流灵敏度为0.324 mV/A,具有特定的热漂移系数.
传感器展示了准确的交流电流测量高达10 Arms.
开发的电子瓦特表在1.5千瓦负载下实现了功率和电流测量的不到1%的偏差.

结论:

TMR技术为电流和功率处理器提供了一种可行且具有竞争力的传感方法.
具有特色的TMR Wheatstone桥梁传感器在不同温度下提供稳定的性能.
集成的电子瓦米表展示了TMR传感器的实际应用,用于准确的功率监测与高压隔离.

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