相关实验视频

Updated: May 5, 2026

Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies

Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies

Published on: March 20, 2015

翻转芯片蓝光微LED与各种被动化的性能比较

Yu-Hsuan Hsu^1,2, Xin-Dai Lin¹, Yi-Hsin Lin²

¹Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC.

|August 16, 2024

概括

一种新的双层被动化技术显著提高了微型LED (μLED) 的性能. 这种方法减少了泄漏电流,并增加了光输出功率,特别是在较小的μLED阵列中.

科学领域:

光电学是指光电子产品.
材料科学材料科学材料科学
半导体设备半导体设备

背景情况:

微LED (μLED) 对于先进的显示技术至关重要.
优化μLED性能需要有效的被动化策略来最大限度地减少泄漏电流并提高效率.
目前的被动化方法在实现统一覆盖和强大的保护方面面临挑战,特别是对于小型设备.

研究的目的:

为了研究双层被动化工艺对微型LED性能的影响.
为了比较单层SiO2被动化与双层Al2O3/SiO2被动化的有效性.
分析对泄漏电流,光输出功率,外部量子效率 (EQE) 和排放均性的影响.

主要方法:

使用翻转芯片粘接制造各种尺寸 (5-50μm) 的μLED阵列.
实施两个被动化技术:单层SiO2 (通过PECVD) 和双层Al2O3/SiO2 (ALD/PECVD).
使用ImageJ软件对μLED性能进行表征,包括泄漏电流,光输出功率,EQE和发射模式.

主要成果:

双层被动化显著减少了5微米μLED的泄漏电流的三次数量.
在所有μLED尺寸的双层被动化中观察到更高的光输出功率.
对于5μmμLED,获得了21.9%的特殊EQE,比单层被动化改进了4.4倍.
使用双层方法观察到5μmμLED的更均的光发射模式.

结论:

双层Al2O3 / SiO2被动化比单层SiO2.3提供更好的保护和覆盖范围.
这种先进的被动化技术大大提高了μLED的性能,特别是在小型设备上.
这些发现为更高效,更可靠的微型LED显示器铺平了道路.

关键词:

原子层沉积的原子层沉积.蓝光灯是蓝光的,它可以发出蓝光.双层被动化双层被动化翻转芯片粘合方式这是一个微型LED.

更多相关视频

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM

Published on: June 16, 2016

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

相关概念视频

Biasing of P-N Junction

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...