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灵敏的SWIR有机光电探测器,光谱响应达到1.5微米

Yi Zhang¹, Jingwen Chen², Jie Yang³

¹State Key Laboratory of Luminescent Materials and Devices, Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, Institute of Polymer Optoelectronic Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, P. R. China.

Advanced materials (Deerfield Beach, Fla.)

|August 17, 2024

概括

研究人员开发了一种新的有机半导体,Y-QC4F,用于短波红外 (SWIR) 光探测器. 这种材料可以实现高性能SWIR成像,克服当前有机光电探测器的局限性.

科学领域:

材料科学材料科学材料科学
有机电子有机电子
光子学是指光子学的使用方法.

背景情况:

有机光电探测器 (OPD) 落后于SWIR光的InGaAs探测器,原因是有机半导体性能超过1.3微米的性能有限.
超低频段间隙有机半导体经常表现出非辐射过渡,减少外部量子效率 (EQE).

研究的目的:

为高效的SWIR有机光电探测器开发一种新的非富勒受体 (NFA).
为了克服超低频段间隙有机半导体的能量差距法限制.

主要方法:

合成了一个新的NFA,Y-QC4F,结合了具有强大的电子负性的二替代结末组 (QC-2F).
使用 Y-QC4F 材料制造的 SWIR OPD.
描述了Y-QC4F膜和设备的光学和电气性能.

主要成果:

Y-QC4F具有超低带隙 (0.83 eV) 和吸收开始高达1.5微米.
在Y-QC4F膜中改善了分子间包装和抑制了非辐射重组.
从0.4到1.5μm,在10^11斯上实现了检测能力 (D*),峰值为1.68 × 10^12斯在1.16μm.
证明了具有竞争力的SWIR成像性能,即使在1.4μm.

结论:

新的Y-QC4F材料显著提高了SWIR OPD的性能.
这一发展为SWIR应用提供了商业InGaAs光探测器的有希望的替代方案.
使用吸收电子的终端组的策略可以指导未来高性能有机半导体的设计.

关键词:

人色变化转移的人色变化转移高检测能力的高检测能力.非富勒受体的非富勒受体有机光探测器有机光探测器短波长红外区域的短波长红外区域.

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