纳米晶体铜用于直接铜与铜的粘合,在低热预算下改善交叉接口形成
Chuan He1, Jingzhuo Zhou2, Rui Zhou3
1Department of Systems Engineering, City University of Hong Kong, Kowloon, Hong Kong, China.
Nature communications
|August 17, 2024
概括
这项研究证明了使用双层结构的低温直接铜与铜的结合. 具有粗粒度层的纳米晶铜使先进的电子包装能够实现显著的粒度增长.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 电子包装 电子包装
背景情况:
- 直接的铜与铜 (Cu-Cu) 结合对于先进的电子包装至关重要.
- 纳米晶体 (NC) 铜促进了谷物生长,但通常需要高温.
- 高热预算限制了NC铜在敏感电子元件中的应用.
研究的目的:
- 研究在低温下在NC铜中实现实质性粒度增长的方法.
- 为了实现电子包装的低热预算的直接Cu-Cu粘合.
- 为了减轻NC铜结合中空隙形成和不完整的粒度生长.
主要方法:
- 制造具有均50纳米粒径和低杂质度 (300 ppm) 的NC铜.
- 开发一个双层 (DL) 结构,底层有一个粗粒度 (CG) 铜层 (粒度大小为1微米,杂质为3ppm).
- 使用CG层作为杂质沉积槽,以促进NC层的扩散.
主要成果:
- 在整个NC层中实现了实质性的谷物生长.
- 通过管理杂质聚合,成功防止空隙形成.
- 在低温度下启用交叉接口Cu-Cu粘合:60分钟100°C或5分钟200°C.
结论:
- 拟议的DL结构有效地促进了NC铜的低温谷物生长.
- 这种方法大大降低了直接Cu-Cu结合所需的热预算.
- 该方法对下一代电子包装应用具有前景.
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