NiCoMoO4/Ti3C2TxMXene.

Wei Li1, Bita Farhadi2, Miaomiao Liu1

  • 1Faculty of Light Industry and Chemical Engineering, Dalian Polytechnic University, Dalian 116034, Liaoning, China.

概括

使用NiCoMoO4/MXene异构结构的接口工程显著提高了超级电容器的性能. 这种新型电极材料表现出高特异电容和出色的稳定性,为先进的灵活电子设备铺平了道路.

相关概念视频

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Design Example: Capacitance Multiplier Circuit01:20

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Capacitor With A Dielectric01:18

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